Introduction

This is the techniqe for the design on the solid state pulsed power devices with supper abilities
and longger lifetime than hydrogen tyratron tubes.
It is based on the new structure of thyristor,which is suggested for the purpose of essential
improvement of the trade-off relation between the parameters "on-state" and "off-state" of power
thyristers ,escpatially between the di/dt (critical rate of rise of on-state current)and du/dt
(critical rate of rise of "off-state" current,is based on the new idea .never be seen in the
previous modeles of the design on the structures of the power thyristors of all kindes.
It is also developed the new thetechniques on the design of high voltage/high current solid
state switches by the series combination of the new thyristors.

Detailed Explanation

- The new structure of the power thyristers enables not only to raise the di/dt parameter of the devices by 3-10 times more than modern ones ,but also to maintain the du/dt at the high level ,at the same manufacturing processes ,using this techniqe ,which can significantly raise the turn-on area when the initial turn-on is taken place by the gate triggering.
It can simultanously improve the Vtm parameter(Peak "on-state"voltage drop)by 0.2-0.5V less ,and forward current density by 1.2 times more than the previous morden structures of the devices with an equal geometric sizes and the same manufacturing processes
- By the new design of series combination of the thyristors of the new structures,it is able to design and manufacture the new solid state devices (high voltage/high current pulsed power switches).
It is easy to design and manufacture the devices that are able to work at any high voltage ,with lower triggering power (only 200-500mA,3-5V).
The space sizes of this devices are so similar or smaller than the tubes that able to realize the ability of direct exchangement from tubes to solid state devices.

Application example

A simple example of this techniqe application,replacing a hydrogen thyratron("T 1-400/16"；made of Russia)directly, is fallowing.

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Parameters Solid state device Thyratron(T 1-400/16)
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max.anode voltage 16 Kv 16Kv
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max.anode current 400 A 400 A
(pulse duration) (0.5-10 microsec.) (0.5-5 microsec.)
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Triggering power(pulse) 0.2-0.5A/3-5V 0.5A/150-250V
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max.repetitive frequency 2500 Hz 500 Hz
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Size 70*70*160 mm(20mm silicon wafer)
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